M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1020 本基準適用於當設備暴露在危險或有毒物質環境中且可能危害健康或環境時，為轉讓設備或改變安裝位置所進行的準備工作。適用範圍包括但不限於運送前的關機、拆卸、移除、標示與包裝作業。

本基準適用於當設備暴露在危險或有毒物質環境中且可能危害健康或環境時，為轉讓設備或改變安裝位置所進行的準備工作。適用範圍包括但不限於運送前的關機、拆卸、移除、標示與包裝作業。

SEMI M20-1110 (technical revision)

SEMI T7-1102 (technical revision)

1-0703 (Reapproved 1109) - テスト特定装置モデル（TSEM）のSECS-II プロトコル仕様

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M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1020 本基準適用於當設備暴露在危險或有毒物質環境中且可能危害健康或環境時，為轉讓設備或改變安裝位置所進行的準備工作。適用範圍包括但不限於運送前的關機、拆卸、移除、標示與包裝作業。This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers.