HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED Revision:SEMI HB9-0818 - Inactive parallel interface for carrier transfer

parallel interface for carrier transfer (SEMI E23)

when defining UPW quality criteria

and many other substrates are being made thinner such as lithium tantalate

1  This Standard establishes two methods for evaluating the chemical resistance of FPD color filters

1-95 (Withdrawn 0304)

HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED Revision:SEMI HB9-0818 - Inactive parallel interface for carrier transferNOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. The purpose of this Standard is to provide test methods to visually detect surface defects of GaN epitaxial wafer for manufacturing high brightness LEDs, and to define acceptance criteria for the types, number, size, and