MF161900 - SEMI MF1619 - Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle Revision:SEMI MF1619-1107 (Reapproved 1023) - Current The term ‘perceptual’ is subject

The term ‘perceptual’ is subject to CIE 248 (CIECAM16

Data taken at particular incident and scatter directions are not extrapolated to other directions

This Standard specifies the protocol and services that compliant intelligent devices shall support to exchange information over the SafetyBUS p semiconductor equipment sensor/actuator network

commonly called metric) units for 100 mm and larger diameter wafers

SEMI F39-1223 (complete rewrite)

MF161900 - SEMI MF1619 - Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle Revision:SEMI MF1619-1107 (Reapproved 1023) - Current The term ‘perceptual’ is subjectThis Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT IR) spectroscopy. In this Test Method, the incident radiation is p polarized and incident on the test specimen at the Brewster angle in order to minimize multiple reflections. Since the interstitial oxygen concentration is proportional to the absorption