M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current SEMI M54-0304 (technical revision)

SEMI M54-0304 (technical revision)

This Standard will define the application of the formula derived in SEMI D31 to various test conditions closed to visual inspection for MURA in flat panel display (FPD) image quality inspection

org in July 2006

SEMI E30-0307 (technical revision)

1  The purpose of this Test Method is to standardize the method for measurement of heat resistance in color filters used for flat panel displays (FPD)

M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current SEMI M54-0304 (technical revision)In recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high tech devices use more and more epitaxial wafers (p p+, n n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other