M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded 11-0316 (Reapproved 0721)

11-0316 (Reapproved 0721)

this Specification allows suppliers of glass substrates for FPDs to simplify substrate information management by marking such information in one location around the OC on the substrate

such as identification for both sides of films

4-95 (first published)

They are not recommended for use in acceptance testing until their precision has been evaluated by interlaboratory comparison unless the parties to the test conduct suitable correlation studies

M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded 11-0316 (Reapproved 0721)This Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer. This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.