CM200DY-24NF 1200V 200A MITSUBISHI IGBT module SIEMENS ET200 Memory module 373 CMOS-EPROM

Memory module 373 CMOS-EPROM

110-230 V AC/DC spring-type terminals

single license SW and documentation on CD

201 Kg Packaging Dimension 18

60 m (197 ft) range

CM200DY-24NF 1200V 200A MITSUBISHI IGBT module SIEMENS ET200 Memory module 373 CMOS-EPROMCM200DY 24NF 1200V 200A MITSUBISHI IGBT module Manufacturer: Mitsubishi Electric Product Category: IGBT Modules Configuration: Dual Collector Emitter Voltage VCEO Max: 1200 V Collector Emitter Saturation Voltage: 1. 8 V Continuous Collector Current at 25 C: 200 A Gate Emitter Leakage Current: 0. 5 uA Pd Power Dissipation: 1130 W Minimum Operating Temperature: 40 C Maximum Operating Temperature: + 150 C Brand: Mitsubishi Electric Maximum Gate Emitter