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C10200 - SEMI C102 - Guide for Reporting Density and Porosity of Chemical Mechanical Planarization (CMP) Polishing Pads Used in Semiconductor Manufacturing Revision:SEMI C102-0621 - Superseded SEMI E5-1108 (technical revision)

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Description

SEMI E5-1108 (technical revision)

装置が生成するデータの定義

This Practice is intended for layer growth and deposition techniques such as epitaxy

and their customers in evaluating leadframe tapes

SEMI E29-1110 (technical revision)

C10200 - SEMI C102 - Guide for Reporting Density and Porosity of Chemical Mechanical Planarization (CMP) Polishing Pads Used in Semiconductor Manufacturing Revision:SEMI C102-0621 - Superseded SEMI E5-1108 (technical revision)This Standard will provide a guide for consistent measurements and reporting measurement conditions of density of chemical mechanical planarization (CMP) pads. This Standard recommends using additional metrologies for measurements of CMP pad density, such as liquid or gas pycnometer metrologies. This Standard does not recommend stopping reporting density parameters using industry traditional metrology based on determining the weight and geometry of

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