PV09300 - SEMI PV93 - Test Method for Accelerated Cell Level Testing for Light And Elevated Temperature Induced Degradation (LeTID) Susceptibility of Solar Cells Revision:SEMI PV93-0320 - Current SEMI 3D16-1116 (first published)

SEMI 3D16-1116 (first published)

originally published in 1997

" Where an analytical procedure different from that provided is substituted by a supplier or user

SEMI F48-0600 (Reapproved 0709)

Substrates polished on both sides

PV09300 - SEMI PV93 - Test Method for Accelerated Cell Level Testing for Light And Elevated Temperature Induced Degradation (LeTID) Susceptibility of Solar Cells Revision:SEMI PV93-0320 - Current SEMI 3D16-1116 (first published)The purpose of the test method is to standardize the procedures, analysis and reporting for quantitatively determining light and elevated temperature induced degradation (LeTID) susceptibility of silicon solar cells. The standard is necessary since the LeTID effect is highly sensitive to temperature and charge carrier injection of solar cells under illumination or current injection. The test method covers the procedure for gauging silicon based