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11 — Specific Device Model for Endpoint Devices
With this Test Method
• Data communications
The residual stress of a thin film layer is calculated in this Test Method based on the Young’s modulus value also obtained in this Test Method
originally published February 1999
P01900 - SEMI P19 - Specification for Metrology Pattern Cells for Integrated Circuit Manufacture StdPbc-0918 11 — Specific Device ModelThis standard was technically approved by the global Micropatterning Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on April 25, 2007. It was available at www. semi. org in June 2007. Originally published in 1992; previously published in 1996. NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or
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