M06000 - SEMI M60 - Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation Revision:SEMI M60-0305 - Superseded SEMI G10-83 (first published)

SEMI G10-83 (first published)

and iron areal densities

SEMI MF1153-92 (Reapproved 2002) (first SEMI publication)

SEMI E30-0725 (technical revision)

1-0813 (technical revision)

M06000 - SEMI M60 - Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation Revision:SEMI M60-0305 - Superseded SEMI G10-83 (first published)This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 25, 2014. Available at www. semiviews. org and www. semi. org in October 2014; originally published January 2005; previously published November 2013. This Test Method details the time dependent dielectric breakdown (TDDB) gate oxide integrity (GOI) approach to silicon