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1-0211 (Reapproved 0218)
This Document defines the representation of Error
SEMI M58-1109 (Reapproved 0125)
This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide
etching technique
MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0320 1-0211 (Reapproved 0218)Electronic grade polycrystalline silicon producers and users require information regarding impurities for quality assurance as well as for research and development purposes. Polysilicon is float zoned and a sample from the zoned rod is analyzed following this Test Method to obtain impurity densities that can be related to the impurity content of the starting material. Photoluminescence analysis identifies and quantifies the electrically active dopant
