M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0624 - Current SEMI E120 — Specification for

SEMI E120 — Specification for the Common Equipment Model (CEM)

SEMI M31 — Mechanical Specifications for Front-Opening Shipping Box Used to Transport and Ship 300 mm Wafers

本スタンダードは，Global Micropatterning Committeeで技術的に承認されたもので，North American Microlithography Committeeが直接責任を負うものである。現版は2004年7月11日North American Regional Standards Committeeにて承認されている。2004年9月にまずwww

1  This Test Method is a means of determining the surface area of polymer pellets

SEMI MF533 — Test Method for Thickness and Thickness of Variation of Silicon Wafers

M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0624 - Current SEMI E120 — Specification forBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H SiC substrates, especially for bipolar devices for power electronics. Most BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device