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M06800 - SEMI M68 - 測定した高さデータ配列から曲率法ZDDを使ってウェーハのエッジ近傍形状を決定するための作業方法 StdPbc-1221 1-0707 (technical revision)

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1-0707 (technical revision)

but the precision estimate was taken from data on polished etched surfaces

local thickness variation) and wafer shape (warp

3  This Specification defines basic metrics for:

Most device applications require that mobile ionic charge be minimized

M06800 - SEMI M68 - 測定した高さデータ配列から曲率法ZDDを使ってウェーハのエッジ近傍形状を決定するための作業方法 StdPbc-1221 1-0707 (technical revision)global Silicon Wafer Committee200994global Audits and Reviews Subcommittee200910www. semi. org200911CD ROM20073200811 ZDD Referenced SEMI Standards SEMI M1 Specifications for Polished Monocrystalline Silicon Wafers SEMI M20 Practice for Establishing a Wafer Coordinate System SEMI M59 Terminology for Silicon Technology SEMI M67 Practice for Determining Wafer Near Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD and ESBIR

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