P04000 - SEMI P40 - 極紫外線リソグラフィマスクの取り付けに関する要求条件およびアライメント基準位置の仕様 Revision:SEMI P40-1103 - Superseded than the current industry process

than the current industry process of record (POR) shore hardness (SH)

conductivity type and polarity of the analyzed side of the material is irrelevant

and many more

The test specimen is a single-side polished silicon wafer of the type specified in SEMI M1

SEMI M67 — Test Method for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR and ESFQD Metrics

P04000 - SEMI P40 - 極紫外線リソグラフィマスクの取り付けに関する要求条件およびアライメント基準位置の仕様 Revision:SEMI P40-1103 - Superseded than the current industry processGlobal Micropatterning CommitteeNorth American Micropatterning Committee200393North American Regional Standards Committee20039www. semi. org200311 EUVL Referenced SEMI Standards SEMI P37 Specification for Extreme Ultraviolet Lithography Mask Substrates SEMI P38 Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks