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M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters Revision:SEMI M54-0304 - Superseded Establishment of other related terminologies

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Establishment of other related terminologies will follow

SEMI E30-0416 (technical revision)

or customers at incoming inspection

- Common approaches for defining specific elements of equipment metadata

the rules for selecting their coordinates on the wafer

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters Revision:SEMI M54-0304 - Superseded Establishment of other related terminologies1 Purpose 1. 1 Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi insulating n type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications. 1. 2 The active layers needed for devices are generated either by epitaxy or by ion implantation. The quality of

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