M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals Revision:SEMI M39-0999 - Inactive The wafer bonding technique used

The wafer bonding technique used was oxide bonding

including operators

本実施法は，Global Facilities Committeeで技術的に承認されたもので，North American Facilities Committeeが直接責任を負うものである。現版は1998年12月18日にNorth American Regional Standards Committeeにて承認された。1999年2月にまずSEMI On Lineで入手可能になり，1999年6月発行に至る。

and associated interface panels

The scope of this Document lists the proposed impurity limits of 25% tetramethylammonium hydroxide used in the semiconductor industry

M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals Revision:SEMI M39-0999 - Inactive The wafer bonding technique usedThis test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Committee. Current edition approved by the Japanese Regional Standards Committee on June 1, 1999. Initially available at www. semi. org August 1999; to be published September 1999. The purpose of this document is to specify a method to measure resistivity and determine Hall mobility of semi