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SEMI M61-0612 (technical revision)
utilizing standardized methods for actuation of process control parameters
in particular orientation
org in August 2017
One of the reasons for using annealed wafers is to allow a reduction in the crystal originated pits (COP)
MF052500 - SEMI MF525 - Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe StdPbc-0521 SEMI M61-0612 (technical revision)This Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type. Resistivity of the epitaxial films can be evaluated without the necessity of thin film correction factors provided that the ratio of layer thickness to effective probe contact radius is greater than 20. This
