MF104900 - SEMI MF1049 - Practice for Shallow Etch Pit Detection on Silicon Wafers StdPbc-0321 This Guide define acceptable CMP

This Guide define acceptable CMP criteria of TSV in terms of dishing

The thickness range of the CSW to be measured with this Test Method depends on details of the specific set-up used

and a system vent

1  This version of the Specification applies to the substrate types: wafers

or JEITA EM-3603B)

MF104900 - SEMI MF1049 - Practice for Shallow Etch Pit Detection on Silicon Wafers StdPbc-0321 This Guide define acceptable CMPThis Practice covers detection of high densities of shallow etch pits on silicon wafers doped either p or n type and with resistivities as low as 0. 005 cm. This Practice is applicable for silicon wafers cut from crystals grown in either a (111) or (100) crystal orientation. This Practice is not recommended for use in defect density evaluations, but as a subjective means of estimating defect densities and distributions on the surface of a polished or