MS00500 - SEMI MS5 - Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures Revision:SEMI MS5-0813 (Reapproved 1125) - Current SEMI M1-1106 (technical revision)

SEMI M1-1106 (technical revision)

Further work may be required to define additional mappings to emerging technologies

Either method may be applied to sheet or bulk specimens

SEMI E135-0918 (Reapproved 0324)

SEMI PV18 — Guide for Specifying a Photovoltaic Connector Ribbon

MS00500 - SEMI MS5 - Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures Revision:SEMI MS5-0813 (Reapproved 1125) - Current SEMI M1-1106 (technical revision)1 Purpose 1. 1 This Test Method enables the determination of the bond strength between two wafers using micro chevron test structures. Wafer wafer bonding is a mainstay for microelectromechanical system (MEMS) and three dimensional stacked integrated circuits (3DS IC) design and fabrication. MEMS components, such as acceleration sensors, gyroscopes, micropumps, or microvalves that are increasingly found in smart automotive and navigation control