M02400 - SEMI M24 - Specification for Polished Monocrystalline Silicon Premium Wafers Revision:SEMI M24-0612 - Inactive Note: This Standard has been

Note: This Standard has been purposely restricted to 100 mm (4 in

Sapphire substrates are utilized for heteroepitaxial growth of silicon films for certain types of device structures

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本書の目的は，半絶縁GaAsの異なるロット間において有意義な比較ができるように，イオン注入，活性化及び生成レイヤーの測定のためのプロセスを与えることである。このテストは成果が標準的方法によって表されるように，サプライヤによって実施されることになろう。

This edition was approved for publication by the global Audits and Reviews Subcommittee in October 1998

M02400 - SEMI M24 - Specification for Polished Monocrystalline Silicon Premium Wafers Revision:SEMI M24-0612 - Inactive Note: This Standard has beenThis standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on November 21, 2006. It was available at www. semi. org in February 2007. Originally published in 1994; previously published November 2005. This document specifies requirements for virgin silicon premium wafers with nominal diameter from 150300 mm used for particle counting, metal