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G02900 - SEMI G29 - Test Method for Trace Contaminants in Molding Compounds Revision:SEMI G29-1296E - Superseded SEMI D30-0707 (technical revision)

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Description

SEMI D30-0707 (technical revision)

Nanotopography on a wafer surface prior to CMP processes can result in variations in post-CMP dielectric thickness with potential negative consequences for circuit performance and yield

3 — Specification for Web Services for Substrate Mapping

1  This Standard is applicable to measurement for optical properties of electronic paper displays under diffuse or directional illumination

SEMI D66-0212 (first published)

G02900 - SEMI G29 - Test Method for Trace Contaminants in Molding Compounds Revision:SEMI G29-1296E - Superseded SEMI D30-0707 (technical revision)This Specification defines the test method for determination of extractable trace contaminants in molding compound. This Test Method is suitable for all molding compound materials and may be used by supplier and customers to determine the trace contaminants in molding compound. Referenced SEMI Standards None.

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