MF072300 - SEMI MF723 - Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon StdTpc-Mass Flow Controllers including geometry and surface characteristics

including geometry and surface characteristics

1 parts per million atomic (ppma)

本スタンダードは，Metrics Global Technical Committeeで技術的に承認されている。現版は2013年6月4日，global Audits and Reviews Subcommitteeにて発行が承認された。2013年8月にwww

hysteresis

SEMI G95 — Mechanical Interface Specification for 450 mm Load Port for Tape Frame Cassettes in the Backend Process

MF072300 - SEMI MF723 - Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon StdTpc-Mass Flow Controllers including geometry and surface characteristicsDopant density and resistivity of silicon are two important acceptance parameters used in the interchange of material by consumers and producers in the semiconductor industry. Therefore, a particular method of converting from dopant density to resistivity and vice versa must be available since some test methods measure resistivity while others measure dopant density. In addition, there are occasions when conversion from resistivity to carrier density