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communication-capable
8 A Short-circuit release 104 A Screw terminal Standard switching capacity
BSM150GB170DLCE3256HDLA1 IGBT MODULE 1700V 300A 1250W
4 V Continuous Collector Current at 25 C: 30 A Gate-Emitter Leakage Current: - Pd - Power Dissipation: 90
names for IP addresses
CM800DX-24T1 Mitsubishi IGBT Modules 1200V 800A Infineon communication-capableCM800DX 24T1 Mitsubishi IGBT Modules 1200V 800A Manufacturer: Mitsubishi Electric Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector Emitter Voltage VCEO Max: 1200 V Collector Emitter Saturation Voltage: 1. 9 V Continuous Collector Current at 25 C: 800 A Gate Emitter Leakage Current: 0. 5 uA Pd Power Dissipation: 3485 W Minimum Operating Temperature: 40 C Maximum Operating Temperature: + 150 C
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