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C10300 - SEMI C103 - Guide for Reporting Performance Parameters of the Chemical Mechanical Planarization (CMP) Conditioning Disks Used in Semiconductor Manufacturing Revision:SEMI C103-1021 - Current SEMI MF1049-1107 (technical revision)

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Description

SEMI MF1049-1107 (technical revision)

UPW parameters

This Test Method is a manual technique that requires the use of a dispersive infrared spectrophotometer

Sampling Method — Usually multiple PV modules are stacked and shipped together in a unit

non-transition metal species have been included as n-type dopants

C10300 - SEMI C103 - Guide for Reporting Performance Parameters of the Chemical Mechanical Planarization (CMP) Conditioning Disks Used in Semiconductor Manufacturing Revision:SEMI C103-1021 - Current SEMI MF1049-1107 (technical revision)This Guide provides measurements and reporting of the parameters of disk aggressiveness, pad surface topography, disk surface topography and changes of the geometry of the disk features that are in contact with the pad during conditioning. This Guide provides measurements and reporting of the changes of aggressiveness and surface topography during the pad conditioning. This Guide provides for optimal sequence of the conditioning tests for multiple

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