MF053300 - SEMI MF533 - Test Method for Thickness and Thickness Variation of Silicon Wafers Revision:SEMI MF533-0310 - Superseded 1-0707 (technical revision)

1-0707 (technical revision)

This Specification covers dimensional

FPD用ガラス基板の有効範囲外に刻印されるマーキングシンボルの位置・寸法・情報量を規定する。

This Guide provides procedures and a decision tree for selecting the different possible options in generating Nanotopography data

The measurement methods for chromatic characteristics comply with SEMI D22

MF053300 - SEMI MF533 - Test Method for Thickness and Thickness Variation of Silicon Wafers Revision:SEMI MF533-0310 - Superseded 1-0707 (technical revision)This Test Method covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer for both flatted and notched wafers. For flatted wafers of 200 mm diameter or less, a five point pattern offset from the bisector of the primary flat is used. For notched wafers of 200 mm diameter or more, either a symmetrical five point or nine point pattern is used. This Test Method is intended