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3D00100 - SEMI 3D1 - スルーシリコンビア(TSV)の幾何学的計測のための用語 Revision:SEMI 3D1-0912 - Superseded and the amount of deformation

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Description

and the amount of deformation induced to the wafer stack by the bonding process

This method can be used to characterize welded connections on the basis of test data developed under the conditions described herein

The scope of this Document covers high purity hafnium amides

This test is optional and may be omitted based on the objective of the testing

applied to all substrates

3D00100 - SEMI 3D1 - スルーシリコンビア(TSV)の幾何学的計測のための用語 Revision:SEMI 3D1-0912 - Superseded and the amount of deformationNOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI 3DS IC Global Technical Committee2012830global Audits and Reviews Subcommittee20129www. semiviews. org www. semi. org TSV TSV TSV TSV SEMI E89 SEMISEMI P35

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