MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors StdVol-Gases SEMI D64-0811 (first published)

SEMI D64-0811 (first published)

1 nm or 632

and extending into the base metal

The results of this test can be used for the qualitative ranking of gas delivery components based on the design as it relates to moisture dry-down performance of the system

SEMI E84-0302 (technical revision)

MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors StdVol-Gases SEMI D64-0811 (first published)This Test Method covers the measurement of generation lifetime and generation velocity of silicon wafers. The measurement requires the fabrication of a guard ring MOS capacitor (refer to Figure 1). This Test Method is therefore destructive to the silicon wafer. This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and