3D00800 - SEMI 3D8 - Guide for Describing Silicon Wafers for Use as 300 mm Carrier Wafers in a 3DS-IC Temporary Bond-Debond (TBDB) Process StdPbc-0912 SEMI D15 — FPD Glass

SEMI D15 — FPD Glass Substrate Surface Waviness Measurement Method

previously published November 2002

residue after evaporation (RAE) (nonvolatile residue [NVR])

•Sensitivity

CCFLのサプライヤとユーザによって使用され，製品や開発品の品質の判定に用いられるものとする。

3D00800 - SEMI 3D8 - Guide for Describing Silicon Wafers for Use as 300 mm Carrier Wafers in a 3DS-IC Temporary Bond-Debond (TBDB) Process StdPbc-0912 SEMI D15 — FPD GlassThis Guide is intended to address the needs of the 3D Stacked IC (3DS IC) industry by defining the items parameters needed to procure virgin silicon carrier wafers to be used in a 3DS IC process. This Guide defines the items parameters to acquire silicon wafers to be used as carrier wafers in a temporary bond debond (TBDB) application. This Guide describes silicon wafers with nominal diameter of 300 mm although, for 3DS IC applications, the actual