3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures Lang-English These methods are applicable to

These methods are applicable to manufacturing

Activation can take up to 3 business days

SEMI F40 — Practice for Preparing Liquid Chemical Distribution Components and Neat Polymers for Chemical Testing

and wafer on wafer (WoW) to help accelerate the progress of 3DS-IC testing

the demand for single substrate transfer

3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures Lang-English These methods are applicable toThis Guide will assist the user in selection and use of tools for performing measurements of geometrical parameters of an individual through silicon via (TSV), or of an array of TSVs. TSVs are expected to be a critical element in future three dimensional stacked integrated circuit (3DS IC) packaging. Advanced TSV designs with higher aspect ratios and smaller diameters may challenge TSV metrology techniques. This Guide will address the various